Title :
A CAD procedure for optimizing bipolar devices relative to BiCMOS circuit delays
Author :
Desouki, Ahmed S. ; Park, Young-June ; Min, Hong-Shick
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., South Korea
fDate :
4/1/1994 12:00:00 AM
Abstract :
Proposes an optimization procedure for the bipolar base doping profile for a high-speed BiCMOS circuit. This procedure aims to achieve the minimum propagation delay time, taking the power supply, the load capacitance, and the bipolar device layout into consideration. For a small load capacitance, the peak base doping concentration and the base width should be as small as possible. However, for a high load capacitance, the optimized base doping profile can vary under the emitter area constraint. Utilizing this optimization procedure, it will be shown that the propagation delay time can be reduced by more than 30% at the same MOS current (IMOS=1 mA) through the coordinated reduction of both the vertical doping profile and the horizontal dimensions of the bipolar transistor, with the power supply voltage scaled from 5 to 3.3 V
Keywords :
BiCMOS integrated circuits; circuit layout CAD; doping profiles; 3.3 V; BiCMOS circuit delays; CAD procedure; MOS current; base width; bipolar base doping profile; bipolar devices; device layout; emitter area constraint; horizontal dimensions; load capacitance; optimization procedure; peak base doping concentration; power supply; propagation delay time; vertical doping profile; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Circuit simulation; Delay effects; Doping profiles; Niobium compounds; Power supplies; Propagation delay; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
