DocumentCode :
1048023
Title :
A 20 to 24 GHz 
16.8 dBm Fully Integrated Power Amplifier Using 0.18 
CMOS Proces
Author :
Jen, Yung-Nien ; Tsai, Jeng-Han ; Peng, Chung-Te ; Huang, Tian-Wei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
19
Issue :
1
fYear :
2009
Firstpage :
42
Lastpage :
44
Abstract :
A 20-24 GHz, fully integrated power amplifier (PA) with on-chip input and output matching is realized in 0.18 mum standard CMOS process. By cascading two cascode stages, the PA achieves 15 dB small signal gain, 10.7% power added efficiency, 16.8 dBm output saturation power and high power density per chip area of 0.137 W/mm2, which is believed to be the highest power density to our knowledge. The whole chip area with pads is 0.35 mm2, which is the smallest one compared to all reported paper.
Keywords :
CMOS integrated circuits; microwave power amplifiers; CMOS process; efficiency 10.7 percent; frequency 20 GHz to 24 GHz; ful integrated power amplifier; gain 15 dB; on-chip input matching; on-chip output matching; size 0.18 mum; 24 GHz; CMOS; fully integrated; power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2008591
Filename :
4729652
Link To Document :
