Characteristics and applications of a Schottky-barrier-gate Gunn-effect digital-device

The theory is developed for the characteristics of a Schottky-barrier-gate Gunn-effect digital-device (SBG GEDD). The four basic parameters, i.e., relative field drop, minimum trigger-field, minimum trigger-pulse duration, and trigger capability, are defined and evaluated numerically for GaAs. Then the device characteristics such as output current, maximum trigger sensitivity, trigger capability, amplification factor, fan-out, noise margin, jitter, unidirectionality, and power-delay product, are derived and calculated for SBG GEDD´s with different doping densities and different sizes by using the results of preliminary measurements. The features of SBG GEDD are 1) great trigger capability, 2) good trigger sensitivity, 3) high unidirectionality, 4) small input capacitance, 5) high response-speed and short delay time, 6) small power-delay product, 7) large fan-out, and 8) simple device and circuit constructions. Some applications are demonstrated to high-speed pulse repeaters and logic circuits.