DocumentCode
1048039
Title
An involute gate-emitter configuration for thyristors
Author
Storm, H.F. ; Clair, John G.
Author_Institution
General Electric Company, Schenectady, N. Y.
Volume
21
Issue
8
fYear
1974
fDate
8/1/1974 12:00:00 AM
Firstpage
520
Lastpage
522
Abstract
In power thyristors and transistors, it is important to inject or remove carriers uniformly and rapidly across the entire junction area. Among the reasons are the following. 1) The switching losses are reduced, thus allowing a higher load-current rating of the device. 2) A thyristor becomes capable to turn off the load current by gate control, thereby eliminating commutating components and their losses. Uniform carrier injection or withdrawal and other desirable side effects are accomplished by a gate- (base) emitter interdigitation in the form of equidistant involutes of a circle.
Keywords
Geometry; Helium; Metallization; Research and development; Storms; Switches; Switching loss; Thyristors; Turning; Voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.17958
Filename
1477773
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