• DocumentCode
    1048039
  • Title

    An involute gate-emitter configuration for thyristors

  • Author

    Storm, H.F. ; Clair, John G.

  • Author_Institution
    General Electric Company, Schenectady, N. Y.
  • Volume
    21
  • Issue
    8
  • fYear
    1974
  • fDate
    8/1/1974 12:00:00 AM
  • Firstpage
    520
  • Lastpage
    522
  • Abstract
    In power thyristors and transistors, it is important to inject or remove carriers uniformly and rapidly across the entire junction area. Among the reasons are the following. 1) The switching losses are reduced, thus allowing a higher load-current rating of the device. 2) A thyristor becomes capable to turn off the load current by gate control, thereby eliminating commutating components and their losses. Uniform carrier injection or withdrawal and other desirable side effects are accomplished by a gate- (base) emitter interdigitation in the form of equidistant involutes of a circle.
  • Keywords
    Geometry; Helium; Metallization; Research and development; Storms; Switches; Switching loss; Thyristors; Turning; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17958
  • Filename
    1477773