DocumentCode :
1048039
Title :
An involute gate-emitter configuration for thyristors
Author :
Storm, H.F. ; Clair, John G.
Author_Institution :
General Electric Company, Schenectady, N. Y.
Volume :
21
Issue :
8
fYear :
1974
fDate :
8/1/1974 12:00:00 AM
Firstpage :
520
Lastpage :
522
Abstract :
In power thyristors and transistors, it is important to inject or remove carriers uniformly and rapidly across the entire junction area. Among the reasons are the following. 1) The switching losses are reduced, thus allowing a higher load-current rating of the device. 2) A thyristor becomes capable to turn off the load current by gate control, thereby eliminating commutating components and their losses. Uniform carrier injection or withdrawal and other desirable side effects are accomplished by a gate- (base) emitter interdigitation in the form of equidistant involutes of a circle.
Keywords :
Geometry; Helium; Metallization; Research and development; Storms; Switches; Switching loss; Thyristors; Turning; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.17958
Filename :
1477773
Link To Document :
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