DocumentCode :
1048062
Title :
Measurements on light emission and current distribution in avalanching epitaxial diodes
Author :
Bar-lev, A. ; Aharoni, H.
Author_Institution :
Technion--Israel Institute of Technology, Haifa, Israel
Volume :
21
Issue :
8
fYear :
1974
fDate :
8/1/1974 12:00:00 AM
Firstpage :
537
Lastpage :
539
Abstract :
Silicon diodes built in epitaxial layers of varying parameters were found to exhibit two distinct modes of light-emission dependence on avalanching current prior to secondary breakdown. The modes depend on whether the depletion layer extends to the substrate interface prior to avalanche or not. Current distribution is inferred from the light curve and a possible mechanism leading to the secondary breakdown is suggested.
Keywords :
Conductivity; Current distribution; Current measurement; Electric breakdown; Electron devices; Epitaxial layers; Notice of Violation; Schottky diodes; Semiconductor diodes; Silicon;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1974.17961
Filename :
1477776
Link To Document :
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