DocumentCode :
1048080
Title :
Tunable 
(LSMO) Ferromagnetic Thin Films for Radio Frequency Applications
Author :
Al Ahmad, Mahmoud ; Lee, Young Taek ; Cheon, Chae Il ; Yun, Eui-Jung ; Plana, Robert
Author_Institution :
LAAS, CNRS, Toulouse
Volume :
19
Issue :
1
fYear :
2009
Firstpage :
36
Lastpage :
38
Abstract :
In this letter, an original work in tunable (La,Sr)MnO3 (LSMO) ferromagnetic thin film materials for radio frequency applications is presented. 400 nm thick LSMO thin film is formed by the chemical solution deposition on the top of indium tin oxide (ITO)/SiO2/Si heterostructure. Interdigitated capacitor structures are used to study the behavior of LSMO thin film materials when a dc electrostatic field bias is applied. With increasing the dc voltage bias, the differential resistance of the film decreases. This change is pronounced in the measured scattering parameters of the device. The presented structure exhibits a tunable wide resistance.
Keywords :
ferromagnetic materials; indium compounds; lanthanum compounds; magnetic thin films; magnetoresistive devices; silicon; silicon compounds; strontium compounds; thin film capacitors; (LaSr)MnO3; InSnO-SiO2-Si; chemical solution deposition; dc electrostatic field bias; dc voltage bias; differential resistance; indium tin oxide heterostructure; interdigitated capacitor structures; radio frequency applications; tunable ferromagnetic thin films; $({rm La},{rm Sr}){rm MnO}_{3}$
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2008575
Filename :
4729657
Link To Document :
