Title :
The effect of Cs-O activation temperature on the surface escape probability of NEA (In,Ga)As photocathodes
Author_Institution :
David Sarnoff Research Center, RCA, Princeton, N. J.
fDate :
8/1/1974 12:00:00 AM
Abstract :
It has been found that the temperature TAat which Cs and O are applied to (In,Ga)As negative electron affinity photocathodes has a strong influence on the surface escape probability B. Over the temperature range investigated, 25-100°C, B changes by a factor of approximately 30.
Keywords :
Cathodes; Gallium arsenide; Heating; Ocean temperature; Sea measurements; Sea surface; Surface treatment; Temperature distribution; Temperature measurement; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17963
