Reduction of Transient Far-End Crosstalk Voltage and Jitter in DIMM Connectors for DRAM Interface

Author

Lee, Kyoungho ; Jung, Hae-Kang ; Sim, Jae-Yoon ; Park, Hong-June

Author_Institution

Dept. of Electron. & Electr. Eng., Pohang Univ. of Sci. & Technol., Pohang

Volume

19

Issue

1

fYear

2009

Firstpage

15

Lastpage

17

Abstract

The transient far-end crosstalk voltage and the crosstalk-induced jitter of dual in-line memory module (DIMM) connectors are reduced by about 80% by increasing the mutual capacitance between DIMM connector pins with the additional interdigitated-comb-shaped metal-stub patterns on the motherboard. It was confirmed by the far-end crosstalk voltage waveform measurements using TDR and the eye diagram measurements at the data rates of 15 Mbps, 100 Mbps, and 3 Gbps. This reduction technique can be applied to the connectors where the inductive coupling ratio is larger than the capacitive coupling ratio.

Keywords

DRAM chips; electric connectors; jitter; DIMM connectors; DRAM interface; capacitive coupling ratio; crosstalk-induced jitter; dual in-line memory module connectors; eye diagram measurements; inductive coupling ratio; interdigitated-comb-shaped metal-stub patterns; motherboard; transient far-end crosstalk voltage; Crosstalk; crosstalk-induced jitter (CIJ); dual in-line memory module (DIMM) connector;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2008.2008536

Filename

4729658