DocumentCode :
1048199
Title :
A 50 to 70 GHz Power Amplifier Using 90 nm CMOS Technology
Author :
Kuo, Jing-Lin ; Tsai, Zuo-Min ; Lin, Kun-You ; Wang, Huei
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
19
Issue :
1
fYear :
2009
Firstpage :
45
Lastpage :
47
Abstract :
A 50 to 70 GHz wideband power amplifier (PA) is developed in MS/RF 90 nm 1P9M CMOS process. This PA achieves a measured Psat of 13.8 dBm, P1 dB of 10.3 dBm, power added efficiency (PAE) of 12.6%, and linear power gain of 30 dB at 60 GHz under VDD biased at 1.8 V. When VDD is biased at 3 V, it exhibits Psat of 18 dBm, P1 dB of 12 dBm, PAE of 15%, and linear gain of 32.4 dB at 60 GHz. The MMIC PA also has a wide 3 dB bandwidth from 50 to 70 GHz, with a chip size of 0.66 times 0.5 mm2. To the author´s knowledge, this PA demonstrates the highest output power, with the highest gain among the reported CMOS PAs in V-band.
Keywords :
CMOS analogue integrated circuits; millimetre wave power amplifiers; wideband amplifiers; CMOS technology; frequency 50 GHz to 70 GHz; linear power gain; power added efficiency; size 90 nm; voltage 1.8 V; voltage 3 V; wideband power amplifier; 60 GHz; Broadband; CMOS; V-band; microwave monolithic integrated circuit (MMIC); power amplifier (PA);
fLanguage :
English
Journal_Title :
Microwave and Wireless Components Letters, IEEE
Publisher :
ieee
ISSN :
1531-1309
Type :
jour
DOI :
10.1109/LMWC.2008.2008603
Filename :
4729665
Link To Document :
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