Title :
MOSFET thresholds at 4.2 K induced by cooling bias
Author :
Tokuda, A.R. ; Lauritzen, P.O.
fDate :
9/1/1974 12:00:00 AM
Abstract :
The threshold voltage of a MOSFET at 4.2 K is affected by the particular bias condition present while the device is being cooled. Measurements disagree with a simple model based upon stored bulk-charge.
Keywords :
Cooling; Cryogenics; Frequency; Geometry; MOSFET circuits; SQUIDs; Superconductivity; Temperature; Thermal conductivity; Tunneling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17975
