Title :
610-nm band AlGaInP single quantum well laser diode
Author :
Bour, D.P. ; Treat, D.W. ; Beernink, K.J. ; Krusor, B.S. ; Geels, R.S. ; Welch, D.F.
Author_Institution :
Electron. Mater. Lab., Xerox Palo Alto Res. Center, CA, USA
Abstract :
The short-wavelength limits of AlGaInP visible laser diodes with Al/sub 0.5/In/sub 0.5/P cladding layers, and Ga/sub x/In/sub 1/spl minus/x/P single quantum well (QW) active regions are investigated. Good performance is maintained throughout the 620 nm band, but the characteristics rapidly degrade in the 610 nm band. Biaxial-compression and -tension were compared, with the case of tension yielding slightly better performance. Using a 25 /spl Aring/ Ga/sub 0.45/In/sub 0.55/P QW, a wavelength of 614 nm was obtained, while a 50 /spl Aring/ Ga/sub 0.6/In/sub 0.4/P QW emitted at 620 nm with a threshold current density of 0.8 kA/cm/sup 2/. These results with thin single QWs indicate the effectiveness of using an Al/sub 0.5/In/sub 0.5/P cladding layer to reduce electron leakage.<>
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium compounds; indium compounds; laser transitions; semiconductor lasers; 25 angstrom; 50 angstrom; 610 nm; 610-nm band AlGaInP single quantum well laser diode; 620 nm; Al/sub 0.5/In/sub 0.5/P; Al/sub 0.5/In/sub 0.5/P cladding layers; AlGaInP; Ga/sub 0.45/In/sub 0.55/P; Ga/sub 0.45/In/sub 0.55/P QW; Ga/sub 0.6/In/sub 0.4/P; Ga/sub 0.6/In/sub 0.4/P QW; Ga/sub x/In/sub 1/spl minus/x/P single quantum well active regions; biaxial-compression; biaxial-tension; electron leakage; short-wavelength limits; threshold current density; visible laser diodes; Degradation; Diode lasers; Electrons; Epitaxial growth; Gallium arsenide; Photonic band gap; Quantum well lasers; Substrates; Temperature; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
