Title :
Selective oxidation of silicon in low-temperature high-pressure steam
Author :
Powell, R.J. ; Ligenza, J.R. ; Schneider, M.S. ; Schneider, M.S.
Author_Institution :
RCA Laboratories, Princeton, N. J.
fDate :
10/1/1974 12:00:00 AM
Abstract :
Silicon has been selectively oxidized in high-pressure steam up to 90 arm at 700°C using Si3N4as an oxidation mask. The rate of oxide growth on
Keywords :
Acceleration; Furnaces; Gold; Impurities; Laboratories; Oxidation; Shape; Silicon devices; Temperature; Weapons;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17982
