• DocumentCode
    1048277
  • Title

    Selective oxidation of silicon in low-temperature high-pressure steam

  • Author

    Powell, R.J. ; Ligenza, J.R. ; Schneider, M.S. ; Schneider, M.S.

  • Author_Institution
    RCA Laboratories, Princeton, N. J.
  • Volume
    21
  • Issue
    10
  • fYear
    1974
  • fDate
    10/1/1974 12:00:00 AM
  • Firstpage
    636
  • Lastpage
    640
  • Abstract
    Silicon has been selectively oxidized in high-pressure steam up to 90 arm at 700°C using Si3N4as an oxidation mask. The rate of oxide growth on
  • Keywords
    Acceleration; Furnaces; Gold; Impurities; Laboratories; Oxidation; Shape; Silicon devices; Temperature; Weapons;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17982
  • Filename
    1477797
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048277