InGaP/InGaAsP/GaAs 0.808 μm separate confinement laser diodes grown by metalorganic chemical vapor deposition

Author

Diaz, J. ; Eliashevich, I. ; Mobarhan, K. ; Kolev, E. ; Wang, L.J. ; Garbuzov, D.Z. ; Razeghi, M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Northwestern Univ., Evanston, IL, USA

Volume

6

Issue

2

fYear

1994

Firstpage

132

Lastpage

134

Abstract

Aluminum-free InGaP/InGaAsP/GaAs separate confinement heterostructures have been grown and used for broad-area stripe diode laser fabrication. The lasers demonstrated a uniform near-field pattern and emission spectrum at /spl lambda/=0.808 μm with a full width at half maximum /spl les/2 mm, meeting the necessary requirements for Nd:YAG pumping systems. A threshold current density of 470 A/cm² and differential efficiency of 0.7 W/A with series resistance of 0.12 /spl Omega/ for 1.37 mm-long diodes have been measured.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; optical pumping; semiconductor growth; semiconductor lasers; vapour phase epitaxial growth; 0.12 ohm; 0.808 mum; 1.37 mm; InGaP-InGaAsP-GaAs; InGaP/InGaAsP/GaAs; MOCVD; Nd:YAG pumping systems; YAG:Nd; YAl5O12:Nd; broad-area stripe diode laser fabrication; differential efficiency; emission spectrum; metalorganic chemical vapor deposition; separate confinement laser diodes; series resistance; threshold current density; uniform near-field pattern; Chemical lasers; Chemical vapor deposition; Diode lasers; Epitaxial growth; Gallium arsenide; Gas lasers; Gold; Laser excitation; Pump lasers; Schottky diodes;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275405

Filename

275405