Characterization of single quantum wells on GaAs/Si grown by metalorganic chemical vapor deposition

Author

Egawa, T. ; George, T. ; Jimbo, T. ; Umeno, M.

Author_Institution

Res. Center for Microstructure Devices, Nagoya Inst. of Technol., Japan

Volume

6

Issue

2

fYear

1994

Firstpage

150

Lastpage

152

Abstract

The use of Al/sub 0.5/Ga/sub 0.5/As/Al/sub 0.55/Ga/sub 0.45/P intermediate layers and in-situ thermal cycle annealing are shown to be effective in obtaining smooth and sharp heterointerfaces for Al/sub 0.3/Ga/sub 0.7/As/GaAs single quantum wells (SQWs) grown on Si substrates, as a result of an initial two-dimensional growth and a reduction in threading dislocation density. The best lasing characteristics are obtained in Al/sub 0.3/Ga/sub 0.7/As/GaAs SQW laser diodes fabricated using the above structure in comparison to those fabricated using the more conventional two-step growth technique.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; 2D semiconductor growth; Al/sub 0.3/Ga/sub 0.7/As/GaAs; Al/sub 0.5/Ga/sub 0.5/As/Al/sub 0.55/Ga/sub 0.45/P; AlGaAs-AlGaP; AlGaAs-GaAs; GaAs; MOCVD; SQW laser diodes; SQWs; Si; Si substrates; in-situ thermal cycle annealing; intermediate layers; lasing characteristics; metalorganic chemical vapor deposition; sharp heterointerfaces; single quantum wells; smooth heterointerfaces; threading dislocation density; two-step growth technique; Annealing; Capacitive sensors; Chemical vapor deposition; Diode lasers; Gallium arsenide; Microelectronics; Monolithic integrated circuits; Space technology; Substrates; Surface morphology;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275412

Filename

275412