• DocumentCode
    1048379
  • Title

    Leakage and hFEdegradation in microwave bipolar transistors

  • Author

    Wang, Albert C. ; Kakihana, Sanehiko

  • Author_Institution
    Hewlett-Packard Company, Palo Alto, Calif.
  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    667
  • Lastpage
    674
  • Abstract
    The phenomenon of hFEdegradation due to an excessive reverse collector bias voltage has been investigated. The correlation between this hFEdegradation phenomenon and the anomalously high collector leakage currents has been established. A model based on channels arising from diffusion induced pipes and spikes is presented. The model successfully explains these phenomena as observed in shallow-diffused microwave transistors.
  • Keywords
    Avalanche breakdown; Bipolar transistors; Degradation; Electric breakdown; Hot carriers; Iron; Leakage current; Microwave transistors; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.17992
  • Filename
    1477807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048379