Title :
1.55 /spl mu/m polarisation independent semiconductor optical amplifier with 25 dB fiber to fiber gain
Author :
Doussiere, P. ; Garabedian, P. ; Graver, C. ; Bonnevie, D. ; Fillion, T. ; Derouin, E. ; Monnot, M. ; Provost, J.G. ; Leclerc, D. ; Klenk, M.
Author_Institution :
Photonic Component Dept., Alcatel Alsthom Recherche, Marcoussis, France
Abstract :
Using a tapered in width square active waveguide and bulk InGaAsP/InP material we demonstrate a polarisation independent amplifier structure operating at 1550 nm with a reduced far-field divergence. Improvement of coupling efficiency enables us to achieve a 25 dB fiber to fiber gain together with 9 dBm fiber saturation output power for 150 mA bias current. A 200 ps gain recovery time allows fast gating or wavelength conversion.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; optical communication equipment; optical couplers; optical fibres; optical saturation; optical waveguides; semiconductor lasers; 1.55 micron; 150 mA; 200 ps; 25 dB; InGaAsP-InP; bias current; bulk InGaAsP/InP material; coupling efficiency; fast gating; fiber saturation output power; fiber to fiber gain; gain recovery time; polarisation independent semiconductor optical amplifier; reduced far-field divergence; tapered in width square active waveguide; wavelength conversion; Indium phosphide; Optical amplifiers; Optical fiber polarization; Optical materials; Optical polarization; Optical waveguides; Power generation; Semiconductor materials; Semiconductor optical amplifiers; Semiconductor waveguides;
Journal_Title :
Photonics Technology Letters, IEEE
