Title :
Frequency response of Ga1-xAlxAs light-emitting diodes
Author :
Namizaki, Hirofumi ; Nagano, Mlnehiko ; Nakahara, Shojiro
Author_Institution :
Mitsubishi Electric Corporation, Itami, Japan
fDate :
11/1/1974 12:00:00 AM
Abstract :
Frequency responses of Ga1-xAlxAs light-emitting diodes with various Al composition are measured. When the emission peaks become shorter than 7000 Å, the cutoff frequencies decrease abruptly from 15 MHz to 5 MHz. A conclusion is that the frequency response is determined mainly by the lifetime of injected electrons which changes along with the Al composition because of the distribution of electrons between the Γ and X valleys.
Keywords :
Capacitance; Charge carrier lifetime; Current measurement; Cutoff frequency; Electrons; Epitaxial growth; Frequency estimation; Frequency response; Light emitting diodes; P-n junctions;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.17995
