Title :
Gain saturation properties of a polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum wells
Author :
Dubovitsky, S. ; Mathur, A. ; Steier, W.H. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Abstract :
The gain saturation properties of a 1.3 μm polarization insensitive semiconductor amplifier implemented with tensile and compressive strain quantum well active region are experimentally investigated in order to determine how well the amplifier maintains its polarization insensitivity in the saturation regime. The amplifier has unsaturated gain of 12 dB and in the saturation regime the maximum observed gain imbalance between TE and TM gains is 0.9 dB. The measured 3 dB saturation output power is 5 mW.
Keywords :
light polarisation; optical saturation; semiconductor lasers; 1.3 micron; 12 dB; 5 mW; InGaAsP-InP; TE gains; TM gains; compressive strain quantum wells; gain imbalance; gain saturation properties; polarization insensitive semiconductor amplifier; polarization insensitivity; quantum well active region; saturation output power; saturation regime; tensile strain quantum wells; unsaturated gain; Gain; Indium phosphide; Optical amplifiers; Optical polarization; Power amplifiers; Power generation; Power measurement; Semiconductor optical amplifiers; Tellurium; Tensile strain;
Journal_Title :
Photonics Technology Letters, IEEE
