• DocumentCode
    1048473
  • Title

    The breakdown voltage of double-sided p-n junctions

  • Author

    Brook, P.

  • Author_Institution
    Ministry of Defence, Baldock, Herts., England
  • Volume
    21
  • Issue
    11
  • fYear
    1974
  • fDate
    11/1/1974 12:00:00 AM
  • Firstpage
    730
  • Lastpage
    731
  • Abstract
    The avalanche breakdown voltage of an abrupt double-sided junction is a function only of Neff(the doping obtained from capacitance-voltage analysis) in a material in which the ionization rates for electrons and holes are equal or maintain a constant ratio. This doping parameter, together with the published breakdown voltage data for single-sided junctions, immediately gives the breakdown voltage of the more complex structure.
  • Keywords
    Admittance; Breakdown voltage; Charge carrier processes; Diodes; Doping; Electric breakdown; Gallium arsenide; Impurities; Ionization; P-n junctions;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1974.18001
  • Filename
    1477816
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1048473