Title :
I-3 low-high profile TRAPATT structure
fDate :
11/1/1974 12:00:00 AM
Keywords :
Diodes; Frequency; Gain; Geometry; Impurities; Microwave amplifiers; Microwave devices; Microwave transistors; Power amplifiers; Power generation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18006
