Title :
I-7 a new vertical geometry MOS transistor for linear microwave power amplification
Author :
Heng, T.M.S. ; Nathanson, H.C.
fDate :
11/1/1974 12:00:00 AM
Keywords :
Charge coupled devices; Density measurement; Geometry; Impedance; Laboratories; Limiting; MOS devices; MOSFETs; Microwave devices; Signal processing;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18007
