DocumentCode :
1048560
Title :
Chirping characteristic of electroabsorption-type optical-intensity modulator
Author :
Mitomi, O. ; Wakita, Koichi ; Kotaka, Isamu
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Volume :
6
Issue :
2
fYear :
1994
Firstpage :
205
Lastpage :
207
Abstract :
A method of precisely estimating the /spl alpha/ factor for electroabsorption-type optical-intensity modulators is described. This method takes into account the nonlinearity of extinction-ratio characteristics. It yields smaller /spl alpha/ factor values than the conventional method under linear extinction-ratio characteristics for large-signal modulation. InGaAs/InAlAs MQW modulators are consequently shown to have an /spl alpha/ factor of less than 1.0 under actual driving voltages.<>
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; semiconductor quantum wells; /spl alpha/ factor; InGaAs-InAlAs; InGaAs/InAlAs; MQW; chirping characteristic; driving voltages; electroabsorption-type; extinction-ratio characteristic; large-signal modulation; linear extinction-ratio characteristics; nonlinearity; optical-intensity modulator; Amplitude modulation; Chirp modulation; Fiber nonlinear optics; High speed optical techniques; Microwave theory and techniques; Nonlinear optics; Optical modulation; Quantum well devices; Stimulated emission; Voltage;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.275429
Filename :
275429
Link To Document :
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