InGaAlAs/InAlAs multiple quantum well phase modulator integrated with spot size conversion structure

Author

Yoshimoto, N. ; Kawano, K. ; Hasumi, Y. ; Takeuchi, H. ; Kondo, S. ; Noguchi, Y.

Author_Institution

NTT Opto-Electron. Labs., Atsugi, Japan

Volume

6

Issue

2

fYear

1994

Firstpage

208

Lastpage

210

Abstract

We have demonstrated an InGaAlAs/InAlAs multiple quantum well phase modulator integrated with a spot-size conversion structure. This modulator successfully operates with a low applied voltage and a small loss increase, and also has highly efficient coupling to single-mode fibers and large misalignment tolerances compared with direct fiber butt coupling. These results show the feasibility and reliability of fiber module assembly.<>

Keywords

III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; integrated optics; optical couplers; optical fibres; phase modulation; semiconductor quantum wells; InGaAlAs-InAlAs; InGaAlAs/InAlAs; fiber module assembly; fibre couplers; highly efficient coupling; integrated; large misalignment tolerances; low applied voltage; multiple quantum well phase modulator; reliability; single-mode fibers; small loss increase; spot size conversion structure; Indium compounds; Indium phosphide; Optical devices; Optical fiber communication; Optical fiber losses; Optical modulation; Optical waveguides; Phase modulation; Quantum well devices; Semiconductor waveguides;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275430

Filename

275430