DocumentCode
1048578
Title
Recent developments in thin film adhesion measurement
Author
Cordill, Megan J. ; Bahr, David F. ; Moody, Neville R. ; Gerberich, William W.
Author_Institution
Dept. of Chem. Eng. & Mater. Sci., Univ. of Minnesota, Minneapolis, MN, USA
Volume
4
Issue
2
fYear
2004
fDate
6/1/2004 12:00:00 AM
Firstpage
163
Lastpage
168
Abstract
Interfacial fracture energies of thin films may be calculated using many different techniques. Nanoindentation and stressed overlayers are by far the most common and more reliable of the testing techniques. They depend on mechanics-based models to calculate the interfacial fracture energy of an interface using only the site specific material properties and the dimensions of the delaminated region, either in spontaneous buckle or indentation-induced blister form. This study will focus on four adhesion measurement techniques: spontaneous buckles, stressed overlayer-induced buckles, and nanoindentation-induced blisters with and without stressed overlayers, to demonstrate that the techniques will produce similar results for the measurement of adhesion energy. Films of tungsten (W), platinum (Pt), and titanium (Ti) on SiO2 (amorphous glass) substrates are examined and values of interfacial fracture energies reported. Results of interfacial fracture energy calculated from spontaneous buckles and indentation-induced blisters compare well to one another and values are reported for the aforementioned films.
Keywords
adhesion; buckling; delamination; fracture; interface structure; platinum; silicon compounds; thin films; titanium; tungsten; wide band gap semiconductors; Pt; SiC substrates; Ti; W; delaminated region; indentation-induced blister form; interfacial fracture energies; nanoindentation; nanoindentation-induced blisters; platinum; site specific material properties; spontaneous buckles; stressed overlayer-induced buckles; stressed overlayers; testing techniques; thin film adhesion measurement; titanium; tungsten; Adhesives; Energy measurement; Material properties; Measurement techniques; Platinum; Stress measurement; Testing; Titanium; Transistors; Tungsten; Adhesion; interfacial fracture energy; nanoindentation; thin films;
fLanguage
English
Journal_Title
Device and Materials Reliability, IEEE Transactions on
Publisher
ieee
ISSN
1530-4388
Type
jour
DOI
10.1109/TDMR.2004.829071
Filename
1318620
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