DocumentCode :
1048584
Title :
High-Resolution Measurement of Resonant Wave Patterns by Perturbing the Evanescent Field Using a Nanosized Probe in a Transmission Scanning Near-Field Optical Microscopy Configuration
Author :
Hopman, Wico C L ; Stoffer, Remco ; De Ridder, René M.
Author_Institution :
Twente Univ., Enschede
Volume :
25
Issue :
7
fYear :
2007
fDate :
7/1/2007 12:00:00 AM
Firstpage :
1811
Lastpage :
1818
Abstract :
In order to model transmission scanning near-field optical microscopy (T-SNOM) experiments, we study the interaction between a nanosized atomic-force-microscopy-type probe and the optical field in a microcavity (MC) at or near resonance. Using a 2-D cross-sectional model of an experimentally studied photonic crystal MC, we have simulated the T-SNOM method by scanning a probe over the surface while monitoring the transmitted and reflected power. The simulations were performed for two probe materials: silicon and silicon nitride. From the probe-induced change in the transmission and reflection spectra, a wavelength shift was extracted. A shift almost proportional to the local field intensity was found if the resonator was excited just below a resonance wavelength. However, at the spots of highest interaction, we observed that besides the desired resonance wavelength shift, there was an increase in scattering. Furthermore, by moving the probe at such a spot in the vertical direction to a height of approximately 0.5, a 5% increase in transmission can be established because the antiresonant condition is satisfied. Finally, a 2-D top view simulation is presented of the experimentally studied T-SNOM method, which shows a remarkably good correspondence in intensity profile, except for the exact location of the high-interaction spots.
Keywords :
atomic force microscopy; integrated optics; microcavities; near-field scanning optical microscopy; optical materials; optical resonators; photonic crystals; 2-D cross-sectional model; evanescent field; high-resolution measurement; integrated optics; local field intensity; nanosized atomic-force-microscopy-type probe; optical microcavities; optical resonator; photonic crystal microcavity; probe-induced change; reflection spectra; resonant wave patterns; transmission scanning near-field optical microscopy; transmission spectra; Atom optics; Atomic measurements; Microcavities; Optical microscopy; Optical resonators; Optical scattering; Optical surface waves; Probes; Resonance; Silicon; Atomic-force microscopy (AFM); integrated optics; modeling; near-field microscopy; optical microcavities; optical signal detection; photonic crystal (PhC); silicon on insulator (SOI);
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2007.897693
Filename :
4267810
Link To Document :
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