Title :
II-8 Characterization of bulk transfer CCD´s using measurements on MOS capacitors and field-effect transistors
Author :
Mohsen, A.M. ; Morris, F.J.
fDate :
11/1/1974 12:00:00 AM
Keywords :
Contracts; Current measurement; Diode lasers; FETs; Gallium arsenide; MOS capacitors; MOSFETs; P-n junctions; Pulse measurements; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18017
