Transparent Oxide Thin-Film Transistors Composed of Al and Sn-doped Zinc Indium Oxide

Author

Cho, Doo-Hee ; Yang, Shinhyuk ; Byun, Chunwon ; Ryu, Min Ki ; Park, Sang-Hee Ko ; Hwang, Chi-Sun ; Yoon, Sung Min ; Chu, Hye-Yong

Author_Institution

Electron. & Telecommun. Res. Inst., Daejeon

Volume

30

Issue

1

fYear

2009

Firstpage

48

Lastpage

50

Abstract

We have fabricated the transparent bottom gate thin-film transistors (TFTs) using Al and Sn-doped zinc indium oxide (AT-ZIO) as an active layer. The AT-ZIO active layer was deposited by RF magnetron sputtering at room temperature, and the AT-ZIO TFT showed a field effect mobility of 15.6 cm²/Vs even before annealing. The mobility increased with increasing the In₂O₃ content and postannealing temperature up to 250^degC. The AT-ZIO TFT exhibited a field effect mobility of 30.2 cm²/Vs, a subthreshold swing of 0.17 V/dec, and an on/off current ratio of more than 10⁹ .

Keywords

aluminium; indium compounds; sputtering; thin film transistors; tin; zinc compounds; Al-ZnIO; In₂O₃; Sn-ZnIO; field effect mobility; magnetron sputtering; postannealing temperature; temperature 293 K to 298 K; transparent bottom gate thin-film transistor; transparent oxide thin-film transistors; Amorphous magnetic materials; Amorphous materials; Annealing; Electric variables; Indium; Radio frequency; Sputtering; Temperature; Thin film transistors; Zinc; Oxide; sputtering; thin-film transistor (TFT); transparent;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2008732

Filename

4729719