Title :
RF Capacitance Extraction Utilizing a Series Resistance Deembedding Scheme for Ultraleaky MOS Devices
Author :
Choi, Gil-Bok ; Hong, Seung-Ho ; Jung, Sung-Woo ; Kang, Hee-Sung ; Jeong, Yoon-Ha
Author_Institution :
Pohang Univ. of Sci. & Technol., Pohang
fDate :
3/1/2008 12:00:00 AM
Abstract :
An accurate extraction method for series resistance and capacitance based on RF S-parameter measurement in ultraleaky MOS devices is presented in this paper. The method is proven by using a three-element equivalent circuit model for a capacitor and a well-known microwave theory. The proposed method improves the measurement accuracy and significantly reduces the frequency-dependence of capacitance. This method is demonstrated for a 1.5 nm SiO2 dielectric NMOSFET.
Keywords :
MOSFET; S-parameters; capacitance measurement; dielectric devices; equivalent circuits; semiconductor device measurement; semiconductor device models; silicon compounds; RF S-parameter measurement; RF capacitance extraction; SiO2; SiO2 dielectric NMOSFET; equivalent circuit model; microwave theory; series resistance deembedding scheme; size 1.5 nm; ultraleaky MOS devices; Capacitance extraction; MOS; RF; capacitance–voltage $(C$–$V)$; capacitance–voltage $(C$–$V)$; deembedding; gate leakage; series resistance; ultrathin oxide;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2007.914080
