DocumentCode
1048958
Title
VI-5 GaAs surface and interface states
Author
Spicer, W.E. ; Gregory, P.
Volume
21
Issue
11
fYear
1974
fDate
11/1/1974 12:00:00 AM
Firstpage
745
Lastpage
745
Keywords
Atomic layer deposition; Capacitance; Electron traps; Gallium arsenide; Interface states; Photoelectricity; Radiative recombination; Spontaneous emission; Surface cleaning; Vacuum technology;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1974.18047
Filename
1477862
Link To Document