Title :
Compound cavity gain of tandem-electrode multiple-quantum-well AlGaAs laser diodes
Author :
Knop, W. ; Harder, C. ; Bächtold, W.
Author_Institution :
Lab. for Electromagnetic Fields & Microwave Electron., Swiss Federal Inst. of Technol., Zurich, Switzerland
fDate :
3/1/1994 12:00:00 AM
Abstract :
The compound cavity gain of multiple-quantum well AlGaAs semiconductor lasers with segmented contacts was measured in detail. A second peak of the gain curve is observed. We discuss the impact of the individual features of gain and absorption on the characteristics of the laser diode and demonstrate that, by changing the bias conditions, these features can be used to produce spectral switching of the lasing wavelength by more than 10 nm.<>
Keywords :
III-V semiconductors; aluminium compounds; electrodes; gallium arsenide; laser cavity resonators; optical switches; semiconductor lasers; AlGaAs; AlGaAs laser diodes; absorption; bias conditions; compound cavity gain; gain curve; lasing wavelength; multiple-quantum-well; second peak; segmented contacts; semiconductor lasers; spectral switching; tandem-electrode; Current measurement; Diode lasers; Gain measurement; Laboratories; Laser modes; Laser theory; Laser tuning; Quantum well devices; Quantum well lasers; Voltage;
Journal_Title :
Photonics Technology Letters, IEEE
