Analysis of temperature dependent optical gain of strained quantum well taking account of carriers in the SCH layer

Author

Ishikawa, H. ; Suemune, I.

Author_Institution

Optoelectron. Res. Div., Fujitsu Labs. Ltd., Atsugi, Japan

Volume

6

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

344

Lastpage

347

Abstract

The temperature dependence of optical gain in strained quantum well is analyzed taking account of carriers in the separate confinement heterostructure (SCH) layer. Taking account of these carriers in the SCH layer can explain to a considerable extent the difference in the temperature performance between the /spl lambda/=0.98 μm laser and /spl lambda/=1.3 μm laser. It is shown that well depth plays a crucial role for the temperature dependence of optical gain. A strained quantum well on an InGaAs ternary substrate is shown to give a high gain with a small temperature dependence.

Keywords

III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; laser theory; semiconductor lasers; 0.98 mum; 1.3 mum; CH layer; GaInAs; GaInAs active quantum well layer; IR laser; InGaAs ternary substrate; SCH layer; optical gain; separate confinement heterostructure; strained quantum well; temperature dependence; temperature dependent optical gain; temperature performance; well depth; Capacitive sensors; Carrier confinement; Gallium arsenide; Indium phosphide; Laser modes; Photonic band gap; Quantum well lasers; Semiconductor lasers; Substrates; Temperature dependence;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.275484

Filename

275484