Title :
Effects of ionization rates on silicon IMPATT devices
Author :
Lee, C.M. ; Seddik, M.M. ; Haddad, G.I.
Author_Institution :
University of Michigan, Ann Arbor, Mich.
fDate :
12/1/1974 12:00:00 AM
Abstract :
The effects of ionization rates of electrons and holes on the properties of silicon IMPATT devices are presented. Both p-type and n-type silicon diodes are considered. Small- and large-signal results are given for typical X-band devices.
Keywords :
Admittance; Charge carrier processes; Diodes; Electric breakdown; Ionization; Physics; Radio frequency; Silicon; Temperature; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1974.18058
