• DocumentCode
    1049085
  • Title

    An amorphous semiconductor electron beam memory

  • Author

    Chen, Arthur C M ; Wang, Jish-min

  • Author_Institution
    General Electric Corporate Research and Development Center, Schenectady, N.Y.
  • Volume
    8
  • Issue
    3
  • fYear
    1972
  • fDate
    9/1/1972 12:00:00 AM
  • Firstpage
    312
  • Lastpage
    314
  • Abstract
    Some aspects of the physics of the recording process of an amorphous semiconductor target in an electron beam memory are described. The fundamental speed-density limitation for this form of memory is given.
  • Keywords
    Amorphous semiconductor devices; Electron-beam memories; Semiconductor memories; Amorphous materials; Amorphous semiconductors; Crystallization; Electron beams; Glass; Heating; Physics; Temperature; Thermal conductivity; Transistors;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1972.1067312
  • Filename
    1067312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049085