مرکز منطقه ای اطلاع رساني علوم و فناوري - Chemical vapor deposition of epitaxial aluminum-substituted YIG for a bubble domain device

DocumentCode :

1049112

Title :

Chemical vapor deposition of epitaxial aluminum-substituted YIG for a bubble domain device

Author :

Sakurai, Yo ; Ataka, Saburo ; Minagawa, Shigekazu ; Ishida, Fumihiko ; Ataka, S. ; Minagawa, S. ; Ishida, Fumihiko

Author_Institution :

Hitachi, Ltd., Tokyo, Japan

Volume :

Issue :

fYear :

1972

fDate :

9/1/1972 12:00:00 AM

Firstpage :

298

Lastpage :

300

Abstract :

Aluminum-substituted yttrium iron garnet Y3AlxFe5-xO12films were epitaxially grown on the

Keywords :

Aluminum; Argon; Chemical vapor deposition; Garnets; Inductors; Iron; Magnetic anisotropy; Magnetic domains; Substrates; Yttrium;

fLanguage :

English

Journal_Title :

Magnetics, IEEE Transactions on

Publisher :

ieee

ISSN :

0018-9464

Type :

jour

DOI :

10.1109/TMAG.1972.1067315

Filename :

1067315

Link To Document :