Title :
Transient temperature rise in silicon semiconductor devices
Author_Institution :
Clarkson College of Technology, Potsdam, N. Y.
fDate :
1/1/1975 12:00:00 AM
Abstract :
The temperature rise in silicon devices under pulsed power conditions is calculated by a numerical method which takes into account the nonlinear properties of the materials. Power is assumed to be dissipated in a thin but finite layer at the surface of a one-dimensional structure. The effect of various types of heat sinks on the peak temperature rise is shown.
Keywords :
Equations; Finite difference methods; Resistance heating; Semiconductor devices; Silicon; Space heating; Space technology; Temperature distribution; Thermal conductivity; Thermal resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18065
