Title :
The effect of Auger recombination on the emitter injection efficiency of bipolar transistors
Author_Institution :
General Electric Company, New York, N. Y.
fDate :
1/1/1975 12:00:00 AM
Keywords :
Bipolar transistors; Doping; Frequency; Impurities; Low-noise amplifiers; Noise level; Radiative recombination; Semiconductor device noise; Semiconductor process modeling; Silicon;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18068
