• DocumentCode
    1049169
  • Title

    The effect of Auger recombination on the emitter injection efficiency of bipolar transistors

  • Author

    Sheng, W.W.

  • Author_Institution
    General Electric Company, New York, N. Y.
  • Volume
    22
  • Issue
    1
  • fYear
    1975
  • fDate
    1/1/1975 12:00:00 AM
  • Firstpage
    25
  • Lastpage
    27
  • Keywords
    Bipolar transistors; Doping; Frequency; Impurities; Low-noise amplifiers; Noise level; Radiative recombination; Semiconductor device noise; Semiconductor process modeling; Silicon;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1975.18068
  • Filename
    1477903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1049169