DocumentCode :
1049465
Title :
Degradation of the power- and frequency-temperature performance of IMPATT diodes at lower frequencies
Author :
Tozer, R.C. ; Hobson, G.S.
Author_Institution :
University of Sheffield, Sheffield, England
Volume :
22
Issue :
3
fYear :
1975
fDate :
3/1/1975 12:00:00 AM
Firstpage :
156
Lastpage :
158
Abstract :
Investigations of the effect of ambient temperature on the RF power and frequency of 
-band p+-n-n+ Si IMPATT diodes at frequencies and temperatures below their optimum conditions show considerable degradation of performance. A simple model is presented to explain these effects in terms of a lower limit to the instantaneous terminal voltage of the diode. Values of diode negative conductance are derived from the measurements and good agreement is obtained with independent measurements. The effects are relevant to both amplitude and frequency stability in wide band applications of IMPATT diodes.
-band p+-n-n+ Si IMPATT diodes at frequencies and temperatures below their optimum conditions show considerable degradation of performance. A simple model is presented to explain these effects in terms of a lower limit to the instantaneous terminal voltage of the diode. Values of diode negative conductance are derived from the measurements and good agreement is obtained with independent measurements. The effects are relevant to both amplitude and frequency stability in wide band applications of IMPATT diodes.Keywords :
Breakdown voltage; Circuits; Degradation; Diodes; Electron devices; Probes; Radio frequency; Space charge; Stability; Temperature;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18096
Filename :
1477931
Link To Document :
