DocumentCode
1049484
Title
Experimental practices of the fine striped memory
Author
Isozaki, Shin ; Shigetoku, Yoshio ; Ogasawara, Mitsutaka ; Tsuchiya, Hideshi ; Sugiura, Toshio ; Inoue, Yasuo ; Kondo, Takashi
Author_Institution
Mitsubishi Electric Corporation, Tokyo, Japan
Volume
8
Issue
3
fYear
1972
fDate
9/1/1972 12:00:00 AM
Firstpage
600
Lastpage
602
Abstract
The memory elements are described in detail for a magnetic thin film memory plane and system, which is a practical example of the fine striped memory (FSM). The present FSM element is of destructive readout (DRO) with a good margin for digit and adjacent word disturbances. The memory plane has 512 words and 72 bits with two crosspoints per bit, and has an economical manufacturing feasibility. The memory module has a 16 kbyte capacity, a good signal-to-noise ratio, and provides a read-write cycle time of 250 ns.
Keywords
Magnetic film memories; Diodes; Ferrites; Glass; Magnetic films; Performance evaluation; Substrates; Surface fitting; Testing; Voltage; Writing;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1972.1067346
Filename
1067346
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