• DocumentCode
    1049484
  • Title

    Experimental practices of the fine striped memory

  • Author

    Isozaki, Shin ; Shigetoku, Yoshio ; Ogasawara, Mitsutaka ; Tsuchiya, Hideshi ; Sugiura, Toshio ; Inoue, Yasuo ; Kondo, Takashi

  • Author_Institution
    Mitsubishi Electric Corporation, Tokyo, Japan
  • Volume
    8
  • Issue
    3
  • fYear
    1972
  • fDate
    9/1/1972 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    602
  • Abstract
    The memory elements are described in detail for a magnetic thin film memory plane and system, which is a practical example of the fine striped memory (FSM). The present FSM element is of destructive readout (DRO) with a good margin for digit and adjacent word disturbances. The memory plane has 512 words and 72 bits with two crosspoints per bit, and has an economical manufacturing feasibility. The memory module has a 16 kbyte capacity, a good signal-to-noise ratio, and provides a read-write cycle time of 250 ns.
  • Keywords
    Magnetic film memories; Diodes; Ferrites; Glass; Magnetic films; Performance evaluation; Substrates; Surface fitting; Testing; Voltage; Writing;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1972.1067346
  • Filename
    1067346