Title :
The highest-frequency (155 GHz and 215 GHz) three-terminal transistor oscillator in the World reported
Author :
Rebeiz, Gabriel M.
Author_Institution :
Radiation Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
4/1/1994 12:00:00 AM
Abstract :
The author describes the background to the development of a 155 GHz and 215 GHz three terminal InP transistor oscillator. The oscillator design is discussed briefly and the role of quasi-optics is considered.<>
Keywords :
III-V semiconductors; MMIC; antenna accessories; indium compounds; lens antennas; microwave antennas; microwave oscillators; multiterminal networks; slot antennas; 155 GHz; 215 GHz; EHF; InP; antennas; design; development; quasioptics; three-terminal transistor oscillator; Circuits; Coplanar waveguides; Dielectric substrates; Indium phosphide; Laboratories; Oscillators; Silicon; Slot antennas; Space technology; Submillimeter wave propagation;
Journal_Title :
Antennas and Propagation Magazine, IEEE
