Charge-storage junction field-effect transistor

A charge-storage junction FET (CSJFET) has been developed which is capable of storing a charge in its gate region. The storage time can be varied in the orders of several seconds to less than one microsecond by illumination or by hole injection. This function is given by the double-layered structure of the gate region. The stored negative space charge in the floating gate region controls the channel conductance of a CSJFET. An illumination-time convertor and a variable delay-time controller are the basic applications. CSJFET´s can easily be fabricated by the bipolar-IC technology.