High-efficiency HBT MMIC linear power amplifier for L-band personal communications systems

Author

Yoshimasu, Toshihiko ; Tanba, Noriyuki ; Hara, Shinji

Author_Institution

Sharp Corp., Nara, Japan

Volume

4

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

65

Lastpage

67

Abstract

A heterojunction bipolar transistor (HBT) MMIC linear power amplifier is demonstrated for the 1.9 GHz Japanese Personal Handy Phone utilizing the /spl pi//4 DQPSK modulation technique. At an operating voltage of only 3 V, an output power of 21 dBm and a power added efficiency of 35% are obtained along with a modulation vector error of 4.5% and an adjacent channel interference of /spl minus/60 dBc in +//spl minus/600 kHz offset frequency bands.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; microwave amplifiers; personal communication networks; phase shift keying; power amplifiers; telephone sets; ultra-high-frequency amplifiers; /spl pi//4 DQPSK modulation technique; 1.9 GHz; 3 V; 35 percent; AlGaAs-GaAs; AlGaAs/GaAs HBT; GaAs; GaAs substrate; HBT MMIC linear power amplifier; Japanese Personal Handy Phone; L-band personal communications systems; PHP handset; adjacent channel interference; modulation vector error; offset frequency bands; operating voltage; output power; power added efficiency; Frequency; Heterojunction bipolar transistors; High power amplifiers; Interchannel interference; L-band; MMICs; Power amplifiers; Power generation; Vectors; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.275582

Filename

275582