Dynamic range of semiconductor laser in the presence of external cavity

Author

Ni, Tsang-Der ; Zhang, Xiangdong ; Daryoush, Afshin S.

Author_Institution

Center for Microwave/Lightwave Eng., Drexel Univ., Philadelphia, PA, USA

Volume

4

Issue

3

fYear

1994

fDate

3/1/1994 12:00:00 AM

Firstpage

68

Lastpage

70

Abstract

This paper presents experimental observations of dynamic range of a laser diode in the presence of external optical feedback. The external cavity provides an efficient frequency response over a narrow band for high frequency carrier signals, while reducing the relative intensity noise for data signals away from the natural resonant frequency. The experimental results show that the spurious free dynamic range can be improved at least by 8 dB using optical feedback over a broad bandwidth. This technique can be used to simultaneously transmit high quality data signals as well as high frequency carrier signals.<>

Keywords

III-V semiconductors; feedback; gallium arsenide; indium compounds; interference suppression; intermodulation; laser cavity resonators; semiconductor lasers; 1.35 GHz; IMD level; InGaAsP; InGaAsP BH laser diode; S/N ratio; broad bandwidth; dynamic range; efficient frequency response; external cavity; external optical feedback; fourth harmonic; high frequency carrier signals; high quality data signals; laser diode; modulation bandwidth; relative intensity noise reduction; semiconductor laser; Diode lasers; Dynamic range; Frequency response; Laser feedback; Laser noise; Narrowband; Noise reduction; Optical feedback; Optical noise; Semiconductor lasers;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.275583

Filename

275583