DocumentCode
1049563
Title
10-W and 12-W GaAs IMPATT´s
Author
Iglesias, D.E. ; Irvin, J.C. ; Niehaus, W.C.
Author_Institution
Bell Laboratories, Murray Hill, N. J.
Volume
22
Issue
4
fYear
1975
fDate
4/1/1975 12:00:00 AM
Firstpage
200
Lastpage
200
Abstract
Hi-lo and lo-hi-lo GaAs Schottky-barrier IMPATT diodes have generated CW power outputs over 12 and 10 W, respectively, at 6 GHz. Noise measurements indicate a decreasing FM noise measure with increasing power output. The diodes are less susceptible to tuning-induced burnout than are flat-profile GaAs Impatts, having repeatedly survived input power surges over 70 W.
Keywords
Circuit testing; Electromagnetic heating; Gallium arsenide; Noise measurement; Power generation; Power measurement; Schottky diodes; Semiconductor device noise; Semiconductor diodes; Tuning;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1975.18105
Filename
1477940
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