Title :
Characterization of CMOS compatible waveguide-coupled leaky-mode photodetectors
Author :
Guangwei Yuan ; Pownall, R. ; Nikkel, P. ; Thangaraj, C. ; Chen, T.W. ; Lear, K.L.
Author_Institution :
Dept. of Electr. & Comput. Eng., Colorado State Univ., Fort Collins, CO
Abstract :
Near-field scanning optical microscopy has been employed for the first time to analyze integrated photodetectors. Waveguide-coupled leaky-mode polysilicon metal-semiconductor-metal photodiodes fabricated in commercial complementary metal-oxide-semiconductor technology for on-chip optical interconnects exhibit a measured effective absorption coefficient of 0.67 dB/mum allowing a 10-mum-long detector to absorb 83% of the light in the waveguide with an estimated responsivity of 0.35 A/W at 654 nm. The measured effective absorption coefficient is in good agreement with effective index mode overlap calculations
Keywords :
CMOS integrated circuits; absorption coefficients; integrated optics; metal-semiconductor-metal structures; near-field scanning optical microscopy; optical interconnections; optical waveguides; photodetectors; photodiodes; 10 mum; CMOS; absorption coefficient; effective index mode; near-field scanning optical microscopy; optical interconnects; photodetectors; polysilicon metal-semiconductor-metal photodiodes; waveguide coupling; Absorption; CMOS technology; Integrated optics; Optical films; Optical interconnections; Optical microscopy; Optical waveguides; Photodetectors; Photodiodes; Silicon; Near-field scanning optical microscopy (NSOM); silicon integrated photonics; waveguide-coupled leaky-mode photodetector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.879527
