A New Analytical Subthreshold Potential/Current Model for Quadruple-Gate Junctionless MOSFETs

Author

Linfeng He ; Te-Kuang Chiang ; Liou, Juin J. ; Wenchao Zheng ; Zhiwei Liu

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

61

Issue

6

fYear

2014

fDate

Jun-14

Firstpage

1972

Lastpage

1978

Abstract

In this paper, we built potential and current models for quadruple-gate junctionless filed-effect transistor (QGJLFET) in subthreshold regime. A new potential distribution function is provided for the cross section of QGJLFETs, based on which we derived a more accurate expression of natural length for QGJLFETs. The result shows that a quadruple-gate FET is far more than a simple composition of two double-gate FETs, but with some coupling components. To avoid complex computation of potential near the corner, we come up with a new concept of equivalent insulator thickness, transforming the influence of corner into the change of insulator thickness. With these renewed parameters and scaling equation, the potential distribution in channel is finally obtained. Based on this potential model, subthreshold current is derived using drift-diffusion approach and Pao-Sah integral.

Keywords

MOSFET; insulators; integral equations; semiconductor device models; Pao-Sah integral; QGJLFET; analytical subthreshold potential-current model; coupling components; drift-diffusion; equivalent insulator thickness; natural length; potential distribution function; quadruple-gate FET; quadruple-gate junctionless MOSFET; quadruple-gate junctionless filed-effect transistor; scaling equation; Analytical models; Computational modeling; Distribution functions; Electric potential; IEEE Potentials; Logic gates; Mathematical model; Drift-diffusion approach; equivalent insulator thickness; junctionless field-effect transistor (JFET); quadruple-gate; scaling length; subthreshold current; subthreshold potential; subthreshold potential.;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2014.2318325

Filename

6809993