DocumentCode :
1049688
Title :
Series resistance effects in semiconductor CV profiling
Author :
Wiley, John D. ; Miller, G.L.
Author_Institution :
Bell Telephone Laboratories, Murray Hill, N. J.
Volume :
22
Issue :
5
fYear :
1975
fDate :
5/1/1975 12:00:00 AM
Firstpage :
265
Lastpage :
272
Abstract :
The effects of series resistance on semiconductor doping profiles obtained by conventional CV analysis are discussed, and it is shown that this resistance can cause extremely large errors in the profiles. It is demonstrated that the existence of such errors can be inferred from suitable RF phase angle measurements obtained during the CV profiling process, and that this information can be used to correct distorted profiles. A theoretical analysis and several computer simulations are presented in order to illustrate the nature of the problem and the methods by which accurate profiles can be obtained. All of the behavior predicted by computer simulations is verified by experimental examples.
Keywords :
Cause effect analysis; Computer errors; Computer simulation; Distortion measurement; Electrical resistance measurement; Error correction; Goniometers; Phase measurement; Radio frequency; Semiconductor device doping;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1975.18117
Filename :
1477952
Link To Document :
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