Title :
Fabrication and Characterization of Germanium ion-implanted IGFET´s
Author :
Wang, K.L. ; Gray, P.V.
Author_Institution :
General Electric Corporate Research and Development, Schenectady, N. Y.
fDate :
6/1/1975 12:00:00 AM
Abstract :
Fabrication of ion-implanted germanium IGFET´s is described. The characteristics of the devices are reported and the measured channel mobilities are related to annealing procedures for reducing interface state density. Charged oxide traps and interface states near the band edges scatter minority carriers in the channel and thus are responsible for reduction of the channel mobility.
Keywords :
Annealing; Electrodes; Electronic ballasts; Fabrication; Germanium; Interface states; Metallization; Optical films; Silicon; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18137
