Title :
Optimum transit angles of millimeter-wave Si IMPATT diodes
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Tokyo, Japan
fDate :
6/1/1975 12:00:00 AM
Abstract :
Optimum transit angles for maximum output power in the millimeter-wave IMPATT diodes are calculated analytically by considering the carrier diffusion process through the space-charge region. It is found that the optimum transit angle decreases, as the space-charge layer width reduces. The theoretical results show satisfactory agreement with the previously published experimental results for Si p+-n-n+abrupt junction diodes.
Keywords :
Charge carrier density; Current density; Diffusion processes; Diodes; Frequency; Millimeter wave communication; Power generation; Region 6; Space vector pulse width modulation; Tuning;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18142
