Title :
Observation of the Boltzmann limit for an IGFET
Author_Institution :
University of California, Davis, Calif.
fDate :
6/1/1975 12:00:00 AM
Abstract :
Experimental evidence is presented which shows that IGFET transconductance/current ratios can approach bipolar values.
Keywords :
MOSFET circuits; Physics; Temperature; Transconductance; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1975.18143
