High-efficiency enhancement-mode power heterojunction FET with buried p/sup +/-GaAs gate structure for low-voltage-operated mobile applications

Author

Bito, Yasunori ; Yamakawa, Yoshiaki ; Tanaka, Shinichi ; Iwata, Naotaka

Author_Institution

NEC Compound Semiconductor Devices, Ltd, Otsu

Volume

27

Issue

8

fYear

2006

Firstpage

636

Lastpage

639

Abstract

This letter describes a successfully developed enhancement-mode double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET with a buried p⁺-n junction gate structure for low-voltage-operated mobile applications. The buried p⁺-GaAs gate structure effectively reduced on-resistance (R_on) and suppressed drain-current frequency dispersion for the device with high positive threshold voltage, resulting in high-efficiency characteristics under low-voltage operation. The fabricated p⁺-gate HJFET exhibited a low R_on of 1.4 Omegamiddotmm with a threshold voltage of +0.4 V. Negligible frequency dispersion characteristics were obtained through pulsed current-voltage measurements for the device. Under a single 2.7-V operation, a 19.8-mm gate width device exhibited a power added efficiency of 51.9% with 26.8-dBm output power and a -40.1-dBc adjacent channel power ratio using a 1.95-GHz wideband code-division multiple-access signal

Keywords

III-V semiconductors; aluminium compounds; field effect transistors; gallium arsenide; indium compounds; thermal stability; 1.4 ohm; 1.95 GHz; 19.8 mm; 2.7 V; AlGaAs-InGaAs-AlGaAs; buried gate structure; buried junction gate structure; drain-current frequency dispersion; enhancement-mode power heterojunction FET; frequency dispersion characteristics; high positive threshold voltage; low-voltage-operated mobile applications; pulsed current-voltage measurements; Current measurement; Dispersion; Double-gate FETs; Frequency measurement; Heterojunctions; Indium gallium arsenide; Power generation; Pulse measurements; Threshold voltage; Wideband; Buried gate; enhancement mode; heterojunction FET; high efficiency; low-voltage operation;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.879043

Filename

1661715